irg5k50p5k50pm06e IRG7T300CH12B 1 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1, 2014 absolute maximum ratings of igbt v ces collector to emitter voltage 1200 v v ges continuous gate to emitter voltage 20 v i c continuous collector current t c = 80c 300 a t c = 25c 570 a i cm pulse collector current t j = 175c 600 a p d maximum power dissipation (igbt) t c = 25c, t j = 175c 1600 w t j maximum igbt junction temperature 175 c t jop maximum operating junction temperature range - 40 to +150 c t stg - 40 to +125 c storage temperature v ces = 1200v i c = 300a at t c = 80c t sc 10sec v ce(on) = 1.90v at i c = 300a high - side chopper igbt with low - side diode pow ir 62 ? package features benefits low v ce(on) and switching losses high efficiency in a wide range of applications rbsoa tested rugged transient performance 10sec short circuit safe operating area pow ir 62 ? package industry standard lead free rohs compliant, environmental friendly base part number package type standard pack quantity orderable part number IRG7T300CH12B pow ir 62 ? box 45 IRG7T300CH12B applications ? industrial motor drive ? uninterruptible power supply ? welding and cutting machine ? switched mode power supply downloaded from: http:///
irg5k50p5k50pm06e IRG7T300CH12B 2 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1, 2014 switching characteristics of igbt parameter min. typ. max. unit test conditions t d(on) turn - on delay time 300 ns t j = 25c v cc =600v, i c = 300a, r g = 3.3?, v ge =15v, inductive load 290 t j = 125c t r rise time 200 ns t j = 25c 210 t j = 125c t d(off) turn - off delay time 540 ns t j = 25c 600 t j = 125c t f fall time 175 ns t j = 25c 195 t j = 125c e on turn - on switching loss 16.9 mj t j = 25c 21.4 t j = 125c e off turn - off switching loss 24.8 mj t j = 25c 31.7 t j = 125c q g total gate charge 1760 nc t j = 25c c ies input capacitance 42.4 nf v ce = 25v, v ge = 0v, f 1mhz, t j = 25c c oes output capacitance 2.18 c res reverse transfer capacitance 1.27 rbsoa reverse bias safe operating area trapezoid i c = 600a,v cc = 960v, v p =1200v, r g = 15?, v ge = +15v to 0v, t j = 150c scsoa short circuit safe operating area 10 s v cc = 600v, v ge = 15v, t j = 150c electrical characteristics of igbt at t j = 25 c (unless otherwise specified) parameter min. typ. max. unit test conditions v (br)ces collector to emitter breakdown voltage 1200 v v ge = 0v, i c = 4ma v ge(th) gate threshold voltage 5.0 5.8 6.5 v i c = 14ma, v ce = v ge v ce(on) collector to emitter saturation voltage 1.90 2.20 v t j = 25c i c = 300a, v ge = 15v 2.20 v t j = 125c i ces collector to emitter leakage current 4 ma v ge = 0v, v ce = v ces i ges gate to emitter leakage current 400 na v ge = 20v, v ce = 0 r gint internal gate resistance 1.25 downloaded from: http:///
irg5k50p5k50pm06e IRG7T300CH12B 3 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1, 2014 absolute maximum ratings of freewheeling diode v rrm repetitive peak reverse voltage 1200 v i f diode continuous forward current, t c = 25c 600 a diode continuous forward current, t c = 80c 300 i fm pulse diode current 600 a absolute maximum ratings of brake - chopper diode v rrm repetitive peak reverse voltage 1200 v i f diode continuous forward current, t c = 25c 600 a diode continuous forward current, t c = 80c 300 i fm pulse diode current 600 a electrical and switching characteristics of freewheeling diode parameter typ. unit test conditions max. v f forward voltage 2.20 v t j = 25c i f = 300a , v ge = 0v 2.70 2.40 t j = 125c i rr peak reverse recovery current 145 a t j = 25c i f 300 a, di/dt=1670a/ s, v rr = 600v, v ge = - 15v 180 t j = 125c q rr reverse recovery charge 18.9 c t j = 25c 32.6 t j = 125c e rec reverse recovery energy 7.6 mj t j = 25c 15.2 t j = 125c electrical and switching characteristics of brake - chopper diode parameter typ. unit test conditions max. v f forward voltage 2.20 v t j = 25c i f = 300a , v ge = 0v 2.70 2.40 t j = 125c i rr peak reverse recovery current 145 a t j = 25c i f 300 a, di/dt=1670a/ s, v rr = 600v, v ge = - 15v 180 t j = 125c q rr reverse recovery charge 18.9 c t j = 25c 32.6 t j = 125c e rec reverse recovery energy 7.6 mj t j = 25c 15.2 t j = 125c downloaded from: http:///
irg5k50p5k50pm06e IRG7T300CH12B 4 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1, 2014 module characteristics min. typ. max. unit parameter v iso isolation voltage (all terminals shorted), f = 50hz, 1minute 2500 v r jc junction - to - case (igbt) 0.099 c/w r jc junction - to - case (freewheeling diode) 0.136 c/w r jc junction - to - case (brake - chopper diode) 0.136 c/w r cs case - to - sink (conductive grease applied) 0.1 c/w m power terminals screw: m6 3.0 5.0 nm m mounting screw: m6 4.0 6.0 nm g weight 230 g downloaded from: http:///
irg5k50p5k50pm06e IRG7T300CH12B 5 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1, 2014 fig.1 typical igbt saturation characteristics fig.2 typical igbt output characteristics fig. 4 typical capacitance characteristics fig.5 typical switching loss vs. collector current fig.6 typical switching loss vs. gate resistance 0 60 120 180 240 300 360 420 480 540 600 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 v ge =15v t j =125c t j =25c v ce (v) i c (a) 0 60 120 180 240 300 360 420 480 540 600 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 t j =125c v ge =17v v ge =15v v ge =13v v ge =11v v ge =9v v ce (v) i c (a) 0 60 120 180 240 300 360 420 480 540 600 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 v ge =0v t j =125c t j =25c v f (v) i f (a) 0 5 10 15 20 25 0 20 40 60 80 100 120 v ge = 0v,f =1 mhz c ies c oes c (nf) v ce (v) 0 60 120 180 240 300 360 420 480 540 600 0 20 40 60 80 100 v cc =600v,v ge =+/-15v, rg =3.3 ohm,t j =125c e off e on e rec e (mj) i c (a) 0 3 6 9 12 15 18 21 24 27 30 0 20 40 60 80 100 120 v cc =600v,v ge =+/-15v, i c =300a,t j =125c e off e on e rec e (mj) rg ( ? ) fig.3 typical forward characteristics, freewheeling diode downloaded from: http:///
irg5k50p5k50pm06e IRG7T300CH12B 6 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1, 2014 fig.7 typical load current vs. frequency fig.8 reverse bias safe operation area (rbsoa) fig.9 typical transient thermal impedance (igbt) fig.10 typical transient thermal impedance (diode) 0.001 0.01 0.1 1 2 0.00 0.02 0.04 0.06 0.08 0.10 0.12 z thjc ( k/w ) t ( s ) z th jc :igbt 0 60 120 180 240 300 360 420 480 540 600 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 v ge =0v t j =125c t j =25c v f (v) i f (a) 0.001 0.01 0.1 1 2 0.00 0.03 0.06 0.09 0.12 0.15 z thjc ( k/w ) t ( s ) z th jc :diode 1 10 100 0 60 120 180 240 300 360 load current (a) frequency (khz) duty cycle:50% t j =125c t c =80c r g =3.3 ohm,v ge =15v square wave: diode as specified v cc i 0 200 400 600 800 1000 1200 0 100 200 300 400 500 600 i c (a) v ces (v) module chip fig.11 typical forward characteristics, brake - chopper diode downloaded from: http:///
irg5k50p5k50pm06e IRG7T300CH12B 7 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1, 2014 internal circuit: package outline (unit: mm): downloaded from: http:///
irg5k50p5k50pm06e IRG7T300CH12B 8 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1, 2014 qualification information ? qualification level industrial moisture sensitivity level not applicable rohs compliant yes ? qualification standards can be found at international rectifie rs web site: http://www.irf.com/product - info/reliability/ ir world headquarters: 101 north sepulveda blvd, el segundo, california, 90245, usa to contact international rectifier, please visit: http://www.irf.com/whoto - call/ downloaded from: http:///
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